采用光加热悬浮区熔法制备了(Mo0.85Nb0.15)Si2单晶体,研究了化学成分和生长速度对获得C40结构单晶体的影响.结果表明:采用此法可制备出表面无裂纹的(Mo0.85Nb0.15)Si2单晶体,其尺寸可达 8 mm×90 mm,晶体的生长面接近(0001)面,生长形态符合布拉维法则、周期键链(PBC)理论和小面生长理论.
所属栏目
新材料 新工艺国家自然科学基金资助项目(50571067);上海市浦江人才计划资助项目(05PJ14072)
收稿日期
2008/12/222009/10/12
作者单位
姜艳:上海交通大学材料科学与工程学院, 上海 200240
朱鸥:上海交通大学材料科学与工程学院, 上海 200240
张澜庭:上海交通大学材料科学与工程学院, 上海 200240
郁金星:上海交通大学材料科学与工程学院, 上海 200240
吴建生:上海交通大学材料科学与工程学院, 上海 200240
备注
姜艳(1983-),女,土族,青海大通人,硕士研究生.
引用该论文:
JIANG Yan,ZHU Ou,ZHANG Lan-ting,YU Jin-xing,WU Jian-sheng.(Mo0.85Nb0.15)Si2 Single Phase Single Crystal Prepared by Photothermal Floating Zone Melting Method[J].Materials for mechancial engineering,2010,34(1):38～40
姜艳,朱鸥,张澜庭,郁金星,吴建生.光加热悬浮区熔法制备(Mo0.85Nb0.15)Si2单相单晶体[J].机械工程材料,2010,34(1):38～40
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