采用射频磁控溅射法在(001)SrTiO3基片上制备了La0.5Sr0.5CoO3薄膜,研究了沉积温度对La0.5Sr0.5CoO3薄膜微结构和导电性能的影响.结果表明:沉积温度低于400 ℃时,薄膜以非晶状态存在,未发生外延生长,沉积温度为550 ℃和650 ℃时,薄膜在基片上实现了外延生长;随着沉积温度的升高薄膜表面粗糙度呈现规律性的变化;薄膜的电阻率随沉积温度的升高单调下降,650 ℃沉积薄膜的电阻率最小为1.63 μΩ·cm.
所属栏目
试验研究“973”前期研究专项资助项目(2007CB616910);国家自然科学基金资助项目(50572021,60876055);河北省自然科学基金资助项目(E2008000620);教育部基金资助项目(207013)
收稿日期
2008/4/52009/3/12
作者单位
付跃举:河北大学物理科学与技术学院 铁性材料与器件研究所, 河北 保定 071002
刘保亭:河北大学物理科学与技术学院 铁性材料与器件研究所, 河北 保定 071002
郭颖楠:河北大学物理科学与技术学院 铁性材料与器件研究所, 河北 保定 071002
傅广生:河北大学物理科学与技术学院 铁性材料与器件研究所, 河北 保定 071002
备注
付跃举(1980-),男,河北献县人,硕士研究生.
引用该论文:
FU Yue-ju,LIU Bao-ting,GUO Ying-nan,FU Guang-sheng.Effect of Deposition Temperatures on Microstructure and Conduction Properties of La0.5Sr0.5CoO3 Films Prepared by Magnetron Sputtering[J].Materials for mechancial engineering,2009,33(4):18～21
付跃举,刘保亭,郭颖楠,傅广生.沉积温度对磁控溅射法制备La0.5Sr0.5CoO3薄膜微结构和导电性能的影响[J].机械工程材料,2009,33(4):18～21
参考文献
【1】
BHASKAR S,MAJUMDER S B. Dielectric and ferroelectric response of sol-gel derived Pb0.85La0.15TiO3 ferroelectric thin films on different bottom electrodes[J].Thin Solid Films,2002,406:30-39.
【2】
GOODENOUGH J B,RACCAH R C. Complex vs band formation in perovskite oxides[J]. J Appl Phs,1963,36:1031-1032.
【3】
HUANG K,HOU P Y,GOODENOUGH J B. Characterization of iron-based alloy interconnects for reduced temperature solid oxide fuel cells[J].Solid State Ionics,2000,129:237-250.
【4】
GHONG S G,GOO E,RAMESH R,et al. Microstructure of epitaxial La0.5Sr0.5CoO3/ ferroelectric Pb0.9La0.1(Zr0.2Ti0.8)0.975O3/La0.5Sr0.5CoO3 heterostructures on LaAlO3[J].Appl Phys Lett,1993,63(12):1628-1630.
【5】
YIN J,ZHU T,LIU Z G,et al. Enhanced fatigue and retention properties of Pb (Ta0.05Zr0.48Ti0.47)O3 films using La0.25Sr0.75CoO3 top and bottom electrodes[J].Appl Phys Lett,1999,75(23):3698-3700.
【6】
DAT R,LICHTENWALNER D J,AUCIELLO O,et al. Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/La0.5Sr0.5CoO3 ferroelectric capacitors on platinized silicon with no polarization fatigue[J].Appl Phys Lett,1994,64(20):2673-2675.
【7】
SENARIS-RODRIGUEZ M A,GOODENOUGH J B. Magnetic and transport properties of the system La1-xSrxCoO3-δ(0【8】
CHEUNG J T,MORGAN P E D,LOWNDES D H,et al. Structural and electrical properties of La0.5Sr0.5CoO3 epitaxial films[J].Appl Phys Lett,1993,62(17):2045-2047.
【9】
LIU B T,YAN X B,ZHANG X,et al. Barrier performance of ultrathin Ni-Ti film for integrating ferroelectric capacitors on Si[J].Appl Phys Lett,2007,91(14):142908.
【10】
LIU B T,CHENG C S,LI F,et al. Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si[J].Appl Phys Lett,2006,88(25):252903.
【11】
LIU B T,MAKI K,SO Y,et al. Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon[J].Appl Phys Lett,2002,80(25):4801-4803.
【12】
IM K V,KUH B J,PARK S O,et al. Influence of La0.5Sr0.5CoO3 heterostructure electrodes on Pb(Zr,Ti)O3 thin film properties[J].Jpn J Appl Phys Part 1,2000,39:5437-5440.
【13】
GUNNAR W,MIKAEL O,ANNIKA P. Alkoxide route to La0.5Sr0.5CoO3 epitaxial thin films on SrTiO3[J].Thin Solid Films,2007,516:4673-4678.
【14】
CHAN P W,WU W B,WONG K H,et al. Preparation and characterization of epitaxial La0.5Sr0.5CoO3 films and of an all a-axis oriented YBa2Cu3O3-y/La0.5Sr0.5CoO3/YBa2Cu3O3-y heterostructure on (001) LaAlO3 by pulsed laser deposition[J].J Phys D: Appl Phys,1997,30:957-961.
【15】
GUNASEKARAN R A,PEDARNIG J D,DINESCU M. Structural,electrical,and surface characteristics of {La0.5Sr0.5CoO3} thin films prepared by pulsed-laser deposition[J].Appl Phys A,1999,69:621-624.
【16】
LI M Y,WANG Z L,FAN S S,et al. Influence of substrates and substrate temperatures on characteristics of epitaxial La0.5Sr0.5CoO3 thin films[J].Thin Solid Films,1998,323:304-308.
【17】
CHEN X,WU N J,IGNATIEV A,et al. Structure and conducting properties of La0.5Sr0.5CoO3-δ films on YSZ[J].Thin Solid Films,1999,350:130-137.
