采用激光分子束外延技术在Si(111)和Si(100)衬底上制备了AlN薄膜, 研究了衬底温度和激光能量对薄膜物相结构和形貌的影响。结果表明: 低的激光能量和高的衬底温度有益于薄膜的取向度和表面质量; 激光能量为100 mJ时, Si(111)衬底上的AlN薄膜呈单一的h-AlN(002)取向, Si(100)衬底上的薄膜在600 ℃时出现小的h-AlN(100)衍射峰, 在700 ℃时呈微弱的h-AlN(002)取向; 在Si(111)衬底上更易生长出取向度高的AlN薄膜。
所属栏目
试验研究有色金属及材料加工新技术教育部重点实验室开放基金资助项目(GXKFZ-05)
收稿日期
2011/7/82012/3/12
作者单位
李雪飞:有色金属及材料加工新技术教育部重点实验室, 广西大学材料科学与工程学院, 南宁 530004
谢尚昇:有色金属及材料加工新技术教育部重点实验室, 广西大学材料科学与工程学院, 南宁 530004
何欢:有色金属及材料加工新技术教育部重点实验室, 广西大学材料科学与工程学院, 南宁 530004
符跃春:有色金属及材料加工新技术教育部重点实验室, 广西大学材料科学与工程学院, 南宁 530004
备注
李雪飞(1987-), 女, 湖南邵阳人, 硕士研究生。
引用该论文:
LI Xue-fei,XIE Shang-sheng,HE Huan,FU Yue-chun.Laser Molecular Beam Epitaxial Growth Characteristics of AlN Thin Film Prepared on Si(111) and Si(100) Substrates[J].Materials for mechancial engineering,2012,36(7):38～40
李雪飞,谢尚昇,何欢,符跃春.Si(111)和Si(100)衬底上AlN薄膜的激光分子束外延生长特征[J].机械工程材料,2012,36(7):38～40
被引情况:
【1】
王志雄,王欣,李霞霞,黄飞武,张霞, "采用固相晶化和准分子激光晶化制备结晶硅薄膜的对比",机械工程材料
38, 46-49(2014)
【2】
徐诚,沈理达,田宗军,刘志东,马云,朱军, "硅基底上喷射电沉积铜/钴多层膜的结合力",机械工程材料
39, 35-39(2015)
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