采用低温三步共蒸发法在柔性聚酰亚胺衬底上制备了铜铟镓硒(CIGSe)薄膜, 利用扫描电子显微镜和X射线衍射仪表征了CIGSe薄膜的结晶质量和晶体结构, 探讨了低温沉积工艺中第二步和第三步衬底温度与薄膜晶粒尺寸、织构取向和结晶性能的关系。结果表明: 随着第二步和第三步衬底温度同时升高, CIGSe薄膜的晶粒尺寸逐渐增大, 镓的两相分离现象逐渐消失; 保持第二步衬底温度不变, 随着第三步衬底温度进一步升高, CIGSe薄膜的晶粒尺寸继续增大, 薄膜的结晶质量显著改善; 第二步和第三步衬底温度的变化对CIGSe薄膜的织构取向基本没有影响。
所属栏目
材料性能及其应用
收稿日期
2014/1/222014/12/20
作者单位
曹章轶:上海空间电源研究所, 上海 200245
吴敏:上海空间电源研究所, 上海 200245
张冬冬:上海空间电源研究所, 上海 200245
备注
曹章轶(1981-), 男, 上海人, 工程师, 硕士。
引用该论文:
CAO Zhang-yi,WU Min,ZHANG Dong-dong.Effect of Substrate Temperature on Crystalline Property of Cu(In,Ga)Se2 Thin Film Grown at Low Temperature[J].Materials for mechancial engineering,2015,39(8):65～69
曹章轶,吴敏,张冬冬.衬底温度对低温制备铜铟镓硒薄膜结晶性能的影响[J].机械工程材料,2015,39(8):65～69
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